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RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
EFM201A THRU EFM207A
SURFACE MOUNT GLASS PASSIVATED SUPER FAST SILICON RECTIFIER
VOLTAGE RANGE 50 to 600 Volts CURRENT 2.0 Amperes
FEATURES
* * * * * * Glass passivated device Ideal for surface mounted applications Low leakage current Metallurgically bonded construction Mounting position: Any Weight: 0.057 gram
DO-214AC
MECHANICAL DATA
* Epoxy : Device has UL flammability classification 94V-0
0.067 (1.70) 0.051 (1.29) 0.180(4.57) 0.160(4.06) 0.110 (2.79) 0.086 (2.18)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 o C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%.
0.091 (2.31) 0.067 (1.70) 0.059 (1.50) 0.035 (0.89) 0.209 (5.31) 0.185 (4.70)
0.012 (0.305) 0.006 (0.152)
0.008 (0.203) 0.004 (0.102)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (At TA = 25 oC unless otherwise noted) RATINGS Maximum Recurrent Peak Reverse Voltage Maximum RMS Volts Maximum DC Blocking Voltage Maximum Average Forward Current at TA = 55 oC Peak Forward Surge Current IFM (surge): 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) Typical Junction Capacitance (Note 2) Operating and Storage Temperature Range SYMBOL VRRM VRMS VDC IO IFSM CJ TJ, TSTG 30 -55 to + 150 EFM201A EFM202A EFM203A EFM204A EFM205A EFM206A EFM207A 50 35 50 100 70 100 150 105 150 200 140 200 2.0 75 20 300 210 300 400 280 400 600 420 600 UNITS Volts Volts Volts Amps Amps pF
0
C
ELECTRICAL CHARACTERISTICS (At TA = 25oC unless otherwise noted) CHARACTERISTICS Maximum Forward Voltage at 2.0A DC Maximum DC Reverse Current at Rated DC Blocking Voltage @TA = 25 o C @TA =150 o C IR trr 35 SYMBOL VF EFM201A EFM202A EFM203A EFM204A EFM205A EFM206A EFM207A 0.95 1.25 1.70 5.0 50 50 nSec 2003-3 UNITS Volts uAmps
Maximum Reverse Recovery Time (Note 1) NOTES : 1. Test Conditions: IF=0.5A, IR=-1.0A, IRR=-0.25A. 2. Measured at 1 MHZ and applied reverse voltage of 4.0 volts.
RATING AND CHARACTERISTIC CURVES ( EFM201A THRU EFM207A )
AVERAGE FORWARD CURENT, (A)
FIG. 1 - TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
50 NONINDUCTIVE 10 NONINDUCTIVE
FIG. 2 - TYPICAL FORWARD CURRENT DERATING CURVE
3.0 2.0
Single Phase Half Wave 60Hz Resistive or Inductive Load
trr +0.5A
(-) PULSE GENERATOR (NOTE 2)
(+) 25 Vdc (approx) (-)
D.U.T
0 -0.25A
1 NONINDUCTIVE
OSCILLOSCOPE (NOTE 1)
(+)
1.0
-1.0A
NOTES:1 Rise Time = 7ns max. Input Impedance =
1 megohm. 22pF. 2. Rise Time = 10ns max. Source Impedance = 50 ohms.
0 0 25 50 75 100 125 150175
1cm
SET TIME BASE FOR 10 ns/cm
AMBIENT TEMPERATURE (
)
FIG. 3 - TYPICAL REVERSE CHARACTERISTICS
INSTANTANEOUS REVERSE CURRENT, (uA)
100
INSTANTANEOUS FORWARD CURRENT, (A)
10
FIG. 4 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS
FM
A~
~E
05
1.0
.1
.1
TJ = 25
EF
M2
EF
.01
TJ = 25 Pulse Width = 300uS 1% Duty Cycle
.01 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE, (%)
FIG. 5 - MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT
PEAK FORWARD SURGE CURRENT, (A)
.001 0 .2 .4 .6 .8 1.0 1.2 1.4 1.6 1.8 INSTANTANEOUS FORWARD VOLTAGE, (V) FIG. 6 - TYPICAL JUNCTION CAPACITANCE
JUNCTION CAPACITANCE, (pF)
105 90 75 60 45 30 15 0 1 2 5 10 20 50 NUMBER OF CYCLES AT 60Hz 100
8.3ms Single Half Sine-Wave (JEDEC Method)
200 100 60 40 20 10 6 4 2 1 .1 .2 .4 1.0 2 4 10 20 40 100
TJ = 25
EF
TJ = 100
01A
M2
M2
EFM
07
A
10
EF
1.0
204
M2
TJ = 150
A
06
A
201
A~E
EFM
FM
205
204
A~E
A
FM2
07A
REVERSE VOLTAGE, ( V )
RECTRON
Mounting Pad Layout
0.094 MAX. (2.38 MAX.)
0.060 MIN. (1.52 MIN.)
0.052 MIN. (1.32 MIN.) 0.220 (5.58) REF
Dimensions in inches and (millimeters)
RECTRON

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